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Isotopic mass effects for low-energy channeling in a silicon crystal

Radiation Effects and Defects in Solids

Monte Carlo (MC) simulations have been used to study the low-energy channeling of (10)B and (11)B ions along the [100] axis in Si crystal. MC simulations show that the critical angle Psi(C) approximate to 15.3(keV/E)(1/2) (in degrees) for the channeling of isotopic (10)B ions and Psi(C) = 14.5(keV/E)(1/2) (in degrees) for the channeling of isotopic (11)B ions, where E is the incident energy. This means that (Psi(C) (for 10B ions)/Psi(C for 11B ions)) approximate to (15.3/14.5) approximate to (11/10)(1/2).

关键词: mass effect;channeling;silicon crystal;single-wall nanotubes;carbon nanotubes;charged-particles;molecular-dynamics;critical angles;heavy-ions;dependence;atoms;distributions;radiation